STD13N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

25V

Number of Terminations :

2

Continuous Drain Current (ID) :

11A

Height :

2.4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

650V

Turn On Delay Time :

11 ns

Transistor Application :

SWITCHING

Power Dissipation :

110W

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Base Part Number :

STD13

Length :

6.6mm

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Factory Lead Time :

16 Weeks

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Packaging :

Cut Tape (CT)

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.5A, 10V

Width :

6.2mm

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

600V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

2

Input Capacitance (Ciss) (Max) @ Vds :

580pF @ 100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Vgs (Max) :

±25V

Resistance :

380mOhm

Series :

MDmesh™ II Plus

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Terminal Form :

Gull wing

Power Dissipation-Max :

110W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Turn-Off Delay Time :

41 ns

Number of Elements :

1

Element Configuration :

Single

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

44A

Fall Time (Typ) :

9.5 ns

Rise Time :

10ns

Mount :

Surface Mount