STD13N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

580pF @ 100V

Element Configuration :

Single

Drain to Source Breakdown Voltage :

650V

Number of Elements :

1

Case Connection :

DRAIN

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

25V

FET Type :

N-Channel

Vgs (Max) :

±25V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Length :

6.6mm

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.5A, 10V

Rise Time :

10ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Turn-Off Delay Time :

41 ns

Pulsed Drain Current-Max (IDM) :

44A

Power Dissipation :

110W

Terminal Form :

Gull wing

Lead Free :

Lead Free

Fall Time (Typ) :

9.5 ns

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

600V

Height :

2.4mm

Continuous Drain Current (ID) :

11A

Turn On Delay Time :

11 ns

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Number of Terminations :

2

Series :

MDmesh™ II Plus

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

16 Weeks

Number of Pins :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Resistance :

380mOhm

Width :

6.2mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

110W Tc

Packaging :

Cut Tape (CT)

Base Part Number :

STD13