STD12NM50ND
- Mfr.Part #
- STD12NM50ND
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 11A DPAK
- Stock
- 10,659
- In Stock :
- 10,659
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 380m Ω @ 5.5A, 10V
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 850pF @ 50V
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 100W
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 40 ns
- ECCN Code :
- EAR99
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Terminal Position :
- Single
- Fall Time (Typ) :
- 17 ns
- Drain to Source Voltage (Vdss) :
- 500V
- DS Breakdown Voltage-Min :
- 500V
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 11A
- Operating Temperature :
- 150°C TJ
- Series :
- FDmesh™ II
- Mount :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Pulsed Drain Current-Max (IDM) :
- 44A
- JESD-30 Code :
- R-PSSO-G2
- Vgs (Max) :
- ±25V
- Rise Time :
- 15ns
- Power Dissipation-Max :
- 100W Tc
- Configuration :
- Single
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JEDEC-95 Code :
- TO-252AA
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Gate to Source Voltage (Vgs) :
- 25V
- Turn On Delay Time :
- 12 ns
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Base Part Number :
- STD12
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- STD12NM50ND
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N-Channel Tape & Reel (TR) 380m Ω @ 5.5A, 10V ±25V 850pF @ 50V 30nC @ 10V 500V TO-252-3, DPak (2 Leads + Tab), SC-63
Description
The STD12NM50ND is a D2PAK, DPAK, TO-220FP N-channel 500 V, 0.29, 11 A, FDmeshTM II Power MOSFET (with fast diode). The MDmeshTM properties are combined with an intrinsic fast-recovery body diode in the FDmeshTM technology. The end solution has lower on-resistance and faster switching commutations, making it ideal for bridge topologies with low trr requirements.
Features
● 100% avalanche tested
● Low gate charge and input capacitance
● Low input gate resistance
● provide greater efficiency while operating at lower voltages
● operate at lower power and draws no current
Applications
● Switching applications
● Switch
● Auto Intensity Control
● Amplifiers
● Chopper
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