STD12NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

100W

Resistance :

380mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

15ns

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - annealed

Lead Free :

Lead Free

Terminal Form :

Gull wing

Number of Terminations :

2

Reach Compliance Code :

not_compliant

Length :

6.6mm

Base Part Number :

STD12

Number of Pins :

3

Fall Time (Typ) :

14 ns

ECCN Code :

EAR99

Continuous Drain Current (ID) :

11A

Nominal Vgs :

3 V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±25V

Voltage - Rated DC :

500V

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-252AA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Breakdown Voltage :

500V

Transistor Application :

SWITCHING

Height :

2.4mm

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Width :

6.2mm

Power Dissipation-Max :

100W Tc

Element Configuration :

Single

Turn-Off Delay Time :

60 ns

Time@Peak Reflow Temperature-Max (s) :

30

Series :

MDmesh™ II

Turn On Delay Time :

15 ns

JESD-30 Code :

R-PSSO-G2

Current Rating :

11A

Termination :

SMD/SMT

Pin Count :

3

Dual Supply Voltage :

500V

Number of Elements :

1

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

44A

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.5A, 10V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

940pF @ 50V

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)