STD12NF06LT4
- Mfr.Part #
- STD12NF06LT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 12A DPAK
- Stock
- 12,414
- In Stock :
- 12,414
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 13 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Length :
- 6.6mm
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 6A, 10V
- Turn-Off Delay Time :
- 20 ns
- Rise Time :
- 35ns
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Power Dissipation-Max :
- 42.8W Tc
- Number of Pins :
- 3
- Case Connection :
- DRAIN
- Height :
- 2.4mm
- Weight :
- 4.535924g
- Turn On Delay Time :
- 10 ns
- Base Part Number :
- STD12
- Power Dissipation :
- 30W
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 60V
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 16V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Mounting Type :
- Surface Mount
- Threshold Voltage :
- 3V
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- Nominal Vgs :
- 2 V
- Drain to Source Breakdown Voltage :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Termination :
- SMD/SMT
- Vgs (Max) :
- ±16V
- Contact Plating :
- Tin
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Form :
- Gull wing
- Current Rating :
- 12A
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Series :
- STripFET™ II
- Dual Supply Voltage :
- 60V
- Width :
- 6.2mm
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 5V
- Peak Reflow Temperature (Cel) :
- 260
- Operating Mode :
- ENHANCEMENT MODE
- Resistance :
- 100MOhm
- Pulsed Drain Current-Max (IDM) :
- 48A
- Continuous Drain Current (ID) :
- 12A
- Datasheets
- STD12NF06LT4
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N-Channel Tape & Reel (TR) 100m Ω @ 6A, 10V ±16V 350pF @ 25V 10nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
STD12NF06LT4 Description
The STD12NF06LT4 Power MOSFET was created with STMicroelectronics' proprietary STripFET? technology, which is specifically engineered to reduce input capacitance and gate charge.
STD12NF06LT4 Features
-
Exceptional dv/dt capability
-
Low gate charge
STD12NF06LT4 Applications
-
Switching applications
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