STD12N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

36A

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.45Ohm

Operating Temperature :

150°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

Mounting Type :

Surface Mount

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Vgs (Max) :

±25V

Power Dissipation-Max :

85W Tc

Series :

MDmesh™ M2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

450m Ω @ 4.5A, 10V

DS Breakdown Voltage-Min :

600V

Avalanche Energy Rating (Eas) :

117 mJ

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

9A

Transistor Application :

SWITCHING

Packaging :

Cut Tape (CT)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

THROUGH-HOLE

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

600V

Number of Terminations :

2

Base Part Number :

STD12

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

538pF @ 100V

Factory Lead Time :

16 Weeks