STD120N4LF6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

40V

Element Configuration :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Length :

6.6mm

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Power Dissipation :

110W

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Resistance :

4mOhm

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

4m Ω @ 40A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

4300pF @ 25V

Terminal Finish :

Matte Tin (Sn) - annealed

Transistor Application :

SWITCHING

Turn On Delay Time :

15 ns

Transistor Element Material :

SILICON

Number of Elements :

1

Radiation Hardening :

No

ECCN Code :

EAR99

FET Type :

N-Channel

Power Dissipation-Max :

110W Tc

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

45 ns

Lead Free :

Lead Free

Mount :

Surface Mount

Continuous Drain Current (ID) :

80A

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Series :

Automotive, AEC-Q101, DeepGATE™, STripFET™ VI

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Base Part Number :

STD12

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Pin Count :

3

Threshold Voltage :

1V

Peak Reflow Temperature (Cel) :

260

Height :

2.4mm

Case Connection :

DRAIN

Turn-Off Delay Time :

125 ns

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

6.2mm

REACH SVHC :

No SVHC

Rise Time :

95ns

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing