STD120N4LF6
- Mfr.Part #
- STD120N4LF6
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 80A DPAK
- Stock
- 2,189
- In Stock :
- 2,189
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Turn-Off Delay Time :
- 125 ns
- Peak Reflow Temperature (Cel) :
- 260
- Turn On Delay Time :
- 15 ns
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Width :
- 6.2mm
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 4300pF @ 25V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- FET Type :
- N-Channel
- Length :
- 6.6mm
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 2
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 110W Tc
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~175°C TJ
- Resistance :
- 4mOhm
- Base Part Number :
- STD12
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 95ns
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 40V
- Fall Time (Typ) :
- 45 ns
- Power Dissipation :
- 110W
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 4m Ω @ 40A, 10V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 80A
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Threshold Voltage :
- 1V
- Height :
- 2.4mm
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Series :
- Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Application :
- SWITCHING
- Datasheets
- STD120N4LF6
STD120N4LF6 Documents
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N-Channel Tape & Reel (TR) 4m Ω @ 40A, 10V ±20V 4300pF @ 25V 80nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD120N4LF6 Description
This product is a 40 V N-channel STripFET? VI
Power MOSFET based on the ST's proprietary
STripFET? technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest
RDS(on) in all packages.
STD120N4LF6 Features
Logic level drive
100% avalanche tested
STD120N4LF6 Applications
Switching applications
– Automotive
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