STD11NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

6.2mm

Number of Elements :

1

Transistor Application :

SWITCHING

Number of Channels :

1

Vgs (Max) :

±25V

Number of Pins :

3

Fall Time (Typ) :

9 ns

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 50V

Mount :

Surface Mount

Power Dissipation-Max :

90W Tc

Operating Temperature :

150°C TJ

Rise Time :

7ns

Series :

FDmesh™ II

Terminal Form :

Gull wing

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

25V

Continuous Drain Current (ID) :

10A

Factory Lead Time :

16 Weeks

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Nominal Vgs :

4 V

Max Junction Temperature (Tj) :

150°C

Height :

2.4mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Radiation Hardening :

No

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - annealed

Length :

6.6mm

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

3V

Resistance :

450mOhm

Turn-Off Delay Time :

50 ns

Base Part Number :

STD11

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Number of Terminations :

2

Element Configuration :

Single

Power Dissipation :

90W

Avalanche Energy Rating (Eas) :

200 mJ

Rds On (Max) @ Id, Vgs :

450m Ω @ 5A, 10V

Pulsed Drain Current-Max (IDM) :

40A

Turn On Delay Time :

16 ns

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

600V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2