STD11N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Turn-Off Delay Time :

23 ns

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 100V

Gate to Source Voltage (Vgs) :

25V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

85W Tc

Turn On Delay Time :

23 ns

ECCN Code :

EAR99

Number of Terminations :

2

Vgs(th) (Max) @ Id :

5V @ 250μA

Height :

2.4mm

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Rds On (Max) @ Id, Vgs :

480m Ω @ 4.5A, 10V

Length :

6.6mm

Transistor Element Material :

SILICON

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±25V

Number of Pins :

3

Terminal Form :

Gull wing

Operating Temperature :

150°C TJ

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

650V

Base Part Number :

STD11

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Resistance :

480mOhm

Current - Continuous Drain (Id) @ 25°C :

9A Tc

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Lead Free :

Lead Free

Continuous Drain Current (ID) :

9A

Series :

MDmesh™ V

Drain Current-Max (Abs) (ID) :

9A

Factory Lead Time :

17 Weeks

Width :

6.2mm

Power Dissipation :

85W