STD110NH02LT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1V @ 250μA

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Rise Time :

224ns

FET Type :

N-Channel

Mount :

Surface Mount

JESD-609 Code :

e3

Series :

STripFET™ III

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Drain-source On Resistance-Max :

0.005ohm

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

not_compliant

Current Rating :

80A

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Number of Terminations :

2

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

40 ns

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

4450pF @ 15V

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

900 mJ

Power Dissipation :

125W

Time@Peak Reflow Temperature-Max (s) :

30

Pulsed Drain Current-Max (IDM) :

320A

Turn-Off Delay Time :

69 ns

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Voltage - Rated DC :

24V

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

93nC @ 10V

ECCN Code :

EAR99

Base Part Number :

STD11

Drain to Source Breakdown Voltage :

24V

Power Dissipation-Max :

125W Tc

Continuous Drain Current (ID) :

80A

Rds On (Max) @ Id, Vgs :

5m Ω @ 40A, 10V