STD10PF06T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Base Part Number :

STD10

Height :

2.63mm

Width :

6.2mm

Vgs (Max) :

±20V

Dual Supply Voltage :

-60V

Power Dissipation-Max :

40W Tc

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Element Configuration :

Single

Terminal Finish :

Matte Tin (Sn)

Threshold Voltage :

-4V

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Resistance :

200mOhm

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

4V @ 250µA

Current Rating :

-10A

Operating Mode :

ENHANCEMENT MODE

Termination :

SMD/SMT

Pin Count :

3

Number of Pins :

3

Power Dissipation :

40W

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

DRAIN

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Pulsed Drain Current-Max (IDM) :

40A

Turn On Delay Time :

7 ns

Rds On (Max) @ Id, Vgs :

200m Ω @ 5A, 10V

Weight :

4.535924g

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Voltage - Rated DC :

-60V

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Max Junction Temperature (Tj) :

175°C

FET Type :

P-Channel

Series :

STripFET™ II

JEDEC-95 Code :

TO-252AA

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

10A

Rise Time :

40ns

Radiation Hardening :

No

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 25V

Drain to Source Breakdown Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

-4 V

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Mounting Type :

Surface Mount

Operating Temperature :

175°C TJ

Fall Time (Typ) :

10 ns

Turn-Off Delay Time :

17 ns

Length :

6.6mm

Packaging :

Tape and Reel (TR)