STD10PF06-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

175°C TJ

Base Part Number :

STD10

Current Rating :

-10A

Drain to Source Breakdown Voltage :

-60V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

40W Tc

Drain to Source Voltage (Vdss) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Length :

6.6mm

Width :

2.4mm

Height :

6.2mm

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 25V

Resistance :

200mOhm

Case Connection :

DRAIN

Continuous Drain Current (ID) :

10A

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

10A Tc

FET Type :

P-Channel

Packaging :

Tube

Rise Time :

40ns

Terminal Finish :

Tin (Sn)

Power Dissipation :

40W

Turn-Off Delay Time :

40 ns

Series :

STripFET™ II

Voltage - Rated DC :

-60V

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

ECCN Code :

EAR99

Fall Time (Typ) :

10 ns

Radiation Hardening :

No

Turn On Delay Time :

20 ns

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

30

Pbfree Code :

yes

Mounting Type :

Through Hole

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

200m Ω @ 5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

40A