STD10P6F6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Rise Time :

7ns

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

REACH SVHC :

No SVHC

Turn-Off Delay Time :

16.5 ns

Transistor Application :

SWITCHING

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 48V

Series :

DeepGATE™, STripFET™ VI

Avalanche Energy Rating (Eas) :

80 mJ

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 10V

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

160m Ω @ 5A, 10V

Operating Temperature :

175°C TJ

Drain to Source Breakdown Voltage :

60V

Case Connection :

DRAIN

Continuous Drain Current (ID) :

10A

Power Dissipation-Max :

35W Tc

Base Part Number :

STD10

Fall Time (Typ) :

10 ns

Power Dissipation :

35W

Pulsed Drain Current-Max (IDM) :

40A

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Resistance :

180mOhm

Threshold Voltage :

-4V

ECCN Code :

EAR99