STD10P10F6
- Mfr.Part #
- STD10P10F6
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 10A DPAK
- Stock
- 30,231
- In Stock :
- 30,231
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 100V
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Terminal Position :
- Single
- DS Breakdown Voltage-Min :
- 100V
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 175°C TJ
- Packaging :
- Cut Tape (CT)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 864pF @ 80V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Number of Elements :
- 1
- Power Dissipation-Max :
- 40W Tc
- FET Type :
- P-Channel
- Rds On (Max) @ Id, Vgs :
- 180m Ω @ 5A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 16.5nC @ 10V
- Drain-source On Resistance-Max :
- 0.18ohm
- Continuous Drain Current (ID) :
- 10A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Series :
- STripFET™ F6
- JESD-30 Code :
- R-PSSO-G2
- Base Part Number :
- STD10
- Pulsed Drain Current-Max (IDM) :
- 40A
- Number of Terminations :
- 2
- ECCN Code :
- EAR99
- Datasheets
- STD10P10F6
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P-Channel Cut Tape (CT) 180m Ω @ 5A, 10V ±20V 864pF @ 80V 16.5nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
STD10P10F6 Description
STD10P10F6 is a 100v P-channel Power MOSFET. The STMicroelectronics STD10P10F6 is developed using the STripFET? F6 technology with a new trench gate structure. The resulting Power MOSFET STD10P10F6 exhibits very low RDS(on) in all packages. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor STD10P10F6 is in the TO-252-3 package with 40W power dissipation.
STD10P10F6 Features
-
Very low on-resistance
-
Very low gate charge
-
High avalanche ruggedness
-
Low gate drive power loss
STD10P10F6 Applications
-
Rotary Switch
-
DIP Switch
-
Limit Switch
-
Reed Switch
-
Rocker Switch
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