STD10NM65N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Rise Time :

8ns

Transistor Element Material :

SILICON

Vgs (Max) :

±25V

FET Type :

N-Channel

Power Dissipation :

90W

Drain to Source Breakdown Voltage :

650V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Number of Terminations :

2

Turn-Off Delay Time :

50 ns

Width :

6.2mm

Height :

2.4mm

Drain Current-Max (Abs) (ID) :

9A

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

JEDEC-95 Code :

TO-252AA

Element Configuration :

Single

Fall Time (Typ) :

20 ns

Length :

6.6mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Continuous Drain Current (ID) :

9A

Peak Reflow Temperature (Cel) :

260

Resistance :

480mOhm

Series :

MDmesh™ II

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

12 ns

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 50V

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

90W Tc

Base Part Number :

STD10

Radiation Hardening :

No

Number of Elements :

1

Threshold Voltage :

3V

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

25V

Rds On (Max) @ Id, Vgs :

480m Ω @ 4.5A, 10V

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Operating Temperature :

150°C TJ

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V