STD10NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

8A

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Part Number :

STD10

Radiation Hardening :

No

Fall Time (Typ) :

9.8 ns

Mount :

Surface Mount

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

600m Ω @ 4A, 10V

Resistance :

600mOhm

Continuous Drain Current (ID) :

8A

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Gate to Source Voltage (Vgs) :

25V

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Number of Pins :

3

Power Dissipation :

70W

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Factory Lead Time :

16 Weeks

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

32 ns

Turn On Delay Time :

9.2 ns

Height :

2.4mm

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Packaging :

Cut Tape (CT)

Vgs(th) (Max) @ Id :

5V @ 250μA

Threshold Voltage :

4V

Element Configuration :

Single

Length :

6.6mm

Drain to Source Breakdown Voltage :

650V

FET Type :

N-Channel

Width :

6.2mm

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±25V

Pin Count :

3

Terminal Finish :

Matte Tin (Sn) - annealed

Power Dissipation-Max :

70W Tc

Series :

FDmesh™ II

JESD-609 Code :

e3

Rise Time :

10ns

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

600V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

577pF @ 50V