STD10NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

MDmesh™ II

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

70W Tc

Gate to Source Voltage (Vgs) :

25V

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

3

JESD-609 Code :

e3

Number of Pins :

3

Drain to Source Breakdown Voltage :

600V

Continuous Drain Current (ID) :

10A

Rise Time :

12ns

Length :

6.6mm

Rds On (Max) @ Id, Vgs :

550m Ω @ 4A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 50V

Number of Terminations :

2

Mounting Type :

Surface Mount

Turn-Off Delay Time :

32 ns

Fall Time (Typ) :

15 ns

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn) - annealed

Base Part Number :

STD10

Vgs (Max) :

±25V

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Nominal Vgs :

3 V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn On Delay Time :

10 ns

REACH SVHC :

No SVHC

Resistance :

600mOhm

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Surface Mount

Threshold Voltage :

3V

Lead Free :

Lead Free

Power Dissipation :

70W

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

16 Weeks

FET Type :

N-Channel

Height :

2.4mm

Avalanche Energy Rating (Eas) :

200 mJ

Width :

6.2mm

Drain Current-Max (Abs) (ID) :

8A

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Radiation Hardening :

No

Packaging :

Cut Tape (CT)

Element Configuration :

Single