STD10N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Base Part Number :

STD10

Gate Charge (Qg) (Max) @ Vgs :

13.5nC @ 10V

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

600V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mount :

Surface Mount

Fall Time (Typ) :

13.2 ns

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Turn-Off Delay Time :

32.5 ns

Continuous Drain Current (ID) :

7.5A

Number of Terminations :

2

Terminal Form :

Gull wing

Factory Lead Time :

16 Weeks

FET Type :

N-Channel

Length :

6.6mm

Resistance :

600mOhm

Series :

MDmesh™ II Plus

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±25V

Rise Time :

8ns

Transistor Application :

SWITCHING

Turn On Delay Time :

8.8 ns

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

85W Tc

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Height :

2.4mm

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Element Configuration :

Single

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 100V

Gate to Source Voltage (Vgs) :

25V

Width :

6.2mm

Rds On (Max) @ Id, Vgs :

600m Ω @ 3A, 10V

Radiation Hardening :

No