SQJQ906E-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Height :

2.03mm

Drain to Source Resistance :

2.7MOhm

Gate to Source Voltage (Vgs) :

20V

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

26 ns

Operating Temperature :

-55°C~175°C TJ

Power - Max :

50W

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Turn On Delay Time :

14 ns

FET Feature :

Standard

Number of Channels :

2

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Max Operating Temperature :

175°C

Mounting Type :

Surface Mount

Package / Case :

PowerPAK® 8 x 8 Dual

FET Type :

2 N-Channel (Dual)

Max Junction Temperature (Tj) :

175°C

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 20V

Drain to Source Breakdown Voltage :

40V

Continuous Drain Current (ID) :

95A

Factory Lead Time :

14 Weeks

Series :

Automotive, AEC-Q101, TrenchFET®

Supplier Device Package :

PowerPAK® 8 x 8 Dual

Drain to Source Voltage (Vdss) :

40V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

3.3mOhm @ 5A, 10V

Power Dissipation :

50W

Current - Continuous Drain (Id) @ 25°C :

95A Tc