SQJQ100E-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

40V

Min Operating Temperature :

-55°C

Power Dissipation-Max :

150W Tc

Turn On Delay Time :

22 ns

Height :

2.03mm

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

14 Weeks

Drain to Source Resistance :

900μOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

Automotive, AEC-Q101, TrenchFET®

Max Operating Temperature :

175°C

Turn-Off Delay Time :

52 ns

Max Junction Temperature (Tj) :

175°C

Package / Case :

8-PowerTDFN

FET Type :

N-Channel

Vgs (Max) :

±20V

Number of Channels :

1

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

200A

Manufacturer Package Identifier :

C14-0891-SINGLE

Supplier Device Package :

PowerPAK® 8 x 8

Gate Charge (Qg) (Max) @ Vgs :

165nC @ 10V

Rds On (Max) @ Id, Vgs :

1.5mOhm @ 20A, 10V

Current - Continuous Drain (Id) @ 25°C :

200A Tc

Input Capacitance (Ciss) (Max) @ Vds :

14780pF @ 25V

Drain to Source Voltage (Vdss) :

40V

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Power Dissipation :

150W