SQJQ112ER-T1_GE3

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Mfr.Part #
SQJQ112ER-T1_GE3
Manufacturer
Vishay
Package / Case
8-PowerSMD, Gull Wing
Datasheet
Download
Description
AUTOMOTIVE N-CHANNEL 100 V (D-S)
Stock
37,719
In Stock :
37,719

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
FET Feature :
-
Drive Voltage (Max Rds On, Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
296A (Tc)
Mounting Style :
SMD/SMT
Minimum Operating Temperature :
- 55 C
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Product Type :
MOSFET
Transistor Polarity :
N-Channel
FET Type :
N-Channel
Channel Mode :
Enhancement
Mounting Type :
Surface Mount
Drain to Source Voltage (Vdss) :
100 V
Package :
Digi-Reel?
Configuration :
Single
Brand :
Vishay Semiconductors
Operating Temperature :
-55°C ~ 175°C (TJ)
Maximum Operating Temperature :
+ 175 C
Manufacturer :
Vishay
Gate Charge (Qg) (Max) @ Vgs :
272 nC @ 10 V
RoHS :
Details
Product Status :
Active
Package / Case :
8-PowerSMD, Gull Wing
Vgs (Max) :
±20V
Number of Channels :
1 Channel
Supplier Device Package :
PowerPAK? 8 x 8
Packaging :
MouseReel
Power Dissipation (Max) :
600W (Tc)
Subcategory :
MOSFETs
Product :
MOSFET
Series :
Automotive, AEC-Q101, TrenchFET?
Rise Time :
21 ns
Input Capacitance (Ciss) (Max) @ Vds :
15945 pF @ 25 V
Product Category :
MOSFET
Rds On (Max) @ Id, Vgs :
2.53mOhm @ 20A, 10V
Datasheets
SQJQ112ER-T1_GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SQJQ112ER-T1_GE3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C ~ 175°C (TJ), Package / Case:8-PowerSMD, Gull Wing, Number of Channels:1 Channel, SQJQ112ER-T1_GE3 pinout, SQJQ112ER-T1_GE3 datasheet PDF, SQJQ112ER-T1_GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SQJQ112ER-T1_GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SQJQ112ER-T1_GE3


N-Channel MouseReel 2.53mOhm @ 20A, 10V ±20V 15945 pF @ 25 V 272 nC @ 10 V 100 V 8-PowerSMD, Gull Wing

SQJQ112ER-T1_GE3 Overview


A device's maximum input capacitance is 15945 pF @ 25 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 100 V drain to source voltage (Vdss).

SQJQ112ER-T1_GE3 Features


a 100 V drain to source voltage (Vdss)


SQJQ112ER-T1_GE3 Applications


There are a lot of Vishay Siliconix
SQJQ112ER-T1_GE3 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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