SQJQ900E-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Series :

Automotive, AEC-Q101, TrenchFET®

DS Breakdown Voltage-Min :

40V

Factory Lead Time :

12 Weeks

Drain Current-Max (Abs) (ID) :

60A

Rds On (Max) @ Id, Vgs :

3.9m Ω @ 20A, 10V

Number of Terminations :

4

Input Capacitance (Ciss) (Max) @ Vds :

5900pF @ 20V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

75W

Drain to Source Voltage (Vdss) :

40V

Published :

2016

Terminal Form :

Gull wing

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Terminal Position :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

PowerPAK® 8 x 8 Dual

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Pulsed Drain Current-Max (IDM) :

400A

Number of Elements :

2

Avalanche Energy Rating (Eas) :

125 mJ

Lead Free :

Lead Free

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G4

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Drain-source On Resistance-Max :

0.0039Ohm

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

Unknown