SQJ980AEP-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Position :

Single

Power - Max :

34W Tc

Operating Temperature :

-55°C~175°C TA

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

75V

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

75V

Series :

Automotive, AEC-Q101, TrenchFET®

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Resistance :

41mOhm

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Feature :

Standard

Continuous Drain Current (ID) :

17A

FET Type :

2 N-Channel (Dual)

Max Power Dissipation :

34W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Threshold Voltage :

2V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Pins :

8

Avalanche Energy Rating (Eas) :

10 mJ

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

4

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

50m Ω @ 3.8A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

790pF @ 35V

Case Connection :

DRAIN

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

REACH SVHC :

Unknown

JESD-30 Code :

R-PSSO-G4

Package / Case :

PowerPAK® SO-8 Dual

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)