SQJ910AEP-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Surface Mount :

yes

ECCN Code :

EAR99

Power - Max :

48W

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Series :

Automotive, AEC-Q101, TrenchFET®

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

Non-RoHS Compliant

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Reach Compliance Code :

Unknown

DS Breakdown Voltage-Min :

30V

Operating Temperature :

-55°C~175°C TJ

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Position :

Single

Package / Case :

PowerPAK® SO-8 Dual

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.007Ohm

Input Capacitance (Ciss) (Max) @ Vds :

1869pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

42 mJ

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Pulsed Drain Current-Max (IDM) :

120A

Number of Terminations :

4

Drain Current-Max (Abs) (ID) :

30A

FET Type :

2 N-Channel (Dual)

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

7m Ω @ 12A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G4

Vgs(th) (Max) @ Id :

2.5V @ 250μA

FET Feature :

Standard

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Mounting Type :

Surface Mount