SQJ912AEP-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

Gull wing

Mount :

Surface Mount

Case Connection :

DRAIN

FET Feature :

Standard

Drain-source On Resistance-Max :

0.0093Ohm

Transistor Element Material :

SILICON

FET Type :

2 N-Channel (Dual)

Packaging :

Tape and Reel (TR)

Package / Case :

PowerPAK® SO-8 Dual

Published :

2017

Drain to Source Voltage (Vdss) :

40V

Input Capacitance (Ciss) (Max) @ Vds :

1835pF @ 20V

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Series :

Automotive, AEC-Q101, TrenchFET®

Rds On (Max) @ Id, Vgs :

9.3m Ω @ 9.7A, 10V

Pulsed Drain Current-Max (IDM) :

120A

Continuous Drain Current (ID) :

30A

Avalanche Energy Rating (Eas) :

34 mJ

Max Power Dissipation :

48W

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Power - Max :

48W

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

40V

ECCN Code :

EAR99

Number of Elements :

2

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G4

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Reach Compliance Code :

Unknown

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

4

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED