SQJ974EP-T1_GE3

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Mfr.Part #
SQJ974EP-T1_GE3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8 Dual
Datasheet
Download
Description
MOSFET 2 N-CH 100V POWERPAK SO8
Stock
48,443
In Stock :
48,443

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Arrays
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1050pF @ 25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
Automotive, AEC-Q101, TrenchFET®
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerPAK® SO-8 Dual
FET Feature :
Standard
Rds On (Max) @ Id, Vgs :
25.5mOhm @ 10A, 10V
Factory Lead Time :
12 Weeks
Drain to Source Voltage (Vdss) :
100V
Operating Temperature :
-55°C~175°C TJ
FET Type :
2 N-Channel (Dual)
Package / Case :
PowerPAK® SO-8 Dual
Power - Max :
48W
Datasheets
SQJ974EP-T1_GE3
Introducing Transistors - FETs, MOSFETs - Arrays Vishay SQJ974EP-T1_GE3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Package / Case:PowerPAK® SO-8 Dual, SQJ974EP-T1_GE3 pinout, SQJ974EP-T1_GE3 datasheet PDF, SQJ974EP-T1_GE3 amp .Beyond Transistors - FETs, MOSFETs - Arrays Vishay SQJ974EP-T1_GE3 ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SQJ974EP-T1_GE3


SQJ974EP-T1_GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at

SQJ974EP-T1_GE3 Description


The SQJ974EP-T1_GE3 is an Automotive Dual N-Channel 100 V (D-S) 175 °C MOSFET. The metal-oxide-semiconductor field-effect transistor is referred to as MOSFET. It has a MOS construction and is a field-effect transistor. The MOSFET typically has three terminals: the gate (G), drain (D), and source (S).



SQJ974EP-T1_GE3 Features


  • 100 % Rg and UIS tested

  • TrenchFET® power MOSFET

  • AEC-Q101 qualified

  • High current: The same tendency as for low ON resistance.

  • High Speed: U-MOS is disadvantageous for high-speed switching because of large gate capacity (Ciss).

  • Withstand voltage: The optimum structure is selected for the target withstand voltage.

  • Low On-Resistance: U-MOS for products with 250 V or less, SJ-MOS (or DTMOS) are advantageous for products with more than that.



SQJ974EP-T1_GE3 Applications


  • Automotive

  • Industrial

  • Communications systems

  • Switching devices in electronic control units

  • As power converters in modern electric vehicles


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