SQJ958EP-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

34.9m Ω @ 4.5A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Number of Channels :

2

Input Capacitance (Ciss) (Max) @ Vds :

1075pF @ 30V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

20A Tc

FET Type :

2 N-Channel (Dual)

Gate to Source Voltage (Vgs) :

20V

Series :

Automotive, AEC-Q101, TrenchFET®

Operating Temperature :

-55°C~175°C TJ

Package / Case :

PowerPAK® SO-8 Dual

Drain to Source Breakdown Voltage :

60V

Turn On Delay Time :

5 ns

Height :

1.267mm

Reach Compliance Code :

Unknown

FET Feature :

Standard

Max Junction Temperature (Tj) :

175°C

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Power Dissipation :

35W

Turn-Off Delay Time :

18 ns

Continuous Drain Current (ID) :

20A