SP8M5FU6TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

N and P-Channel

Operating Temperature :

150°C TJ

Continuous Drain Current (ID) :

7A

Power Dissipation :

2W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Drain to Source Breakdown Voltage :

30V

Turn-Off Delay Time :

110 ns

Mount :

Surface Mount

Published :

2004

Rds On (Max) @ Id, Vgs :

28m Ω @ 6A, 10V

ECCN Code :

EAR99

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Max Power Dissipation :

2W

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

10.1nC @ 5V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

6A 7A

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Rise Time :

50ns

Base Part Number :

*M5

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

Fall Time (Typ) :

70 ns

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

7A