SP8M3TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 10V

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Transistor Application :

SWITCHING

Lead Free :

Lead Free

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Terminal Finish :

TIN COPPER

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

3.9nC @ 5V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

5A 4.5A

Pbfree Code :

yes

JESD-609 Code :

e2

Terminal Position :

Dual

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Published :

2004

Transistor Element Material :

SILICON

Base Part Number :

*M3

Time@Peak Reflow Temperature-Max (s) :

10

Drain to Source Voltage (Vdss) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

2W

Number of Terminations :

8

Drain Current-Max (Abs) (ID) :

5A

Pulsed Drain Current-Max (IDM) :

20A

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Continuous Drain Current (ID) :

4.5A

Current Rating :

5A

Rds On (Max) @ Id, Vgs :

51m Ω @ 5A, 10V

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

FET Type :

N and P-Channel

Rise Time :

25ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

DS Breakdown Voltage-Min :

30V

Mount :

Surface Mount

Operating Temperature :

150°C TJ