SLA5061

Manufacturer :

Sanken Electric Co., Ltd.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Channel Mode :

Enhancement

Configuration :

COMPLEX

Package Type :

SIP

Continuous Drain Current (ID) :

6A

Gate-Source Voltage (Max) :

±20(V)

Rds On Max :

140 mΩ

Published :

2001

Terminal Position :

Single

Polarity :

N/P

Package :

Bulk

Number of Terminations :

12

HTS Code :

8541.29.00.95

RoHS :

Compliant

Operating Temp Range :

-40C to 150C

Technology :

MOSFET (Metal Oxide)

Series :

--

Package / Case :

12-SIP

Rad Hardened :

No

DS Breakdown Voltage-Min :

60V

JESD-30 Code :

R-PSFM-T12

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

--

Lead Free :

Lead Free

Pin Count :

12

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.14Ohm

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

RoHS Status :

RoHS Compliant

Qualification Status :

Not Qualified

Drain-Source On-Volt :

60(V)

Supplier Device Package :

12-SIP w/fin

Base Product Number :

SLA50

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Number of Elements :

6

Gate Charge (Qg) (Max) @ Vgs :

--

Mounting :

Through Hole

Type :

Power MOSFET

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

15A

Drain to Source Voltage (Vdss) :

60V

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 10V

Drain Current-Max (Abs) (ID) :

10A

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

3 N and 3 P-Channel (3-Phase Bridge)

Rds On (Max) @ Id, Vgs :

140m Ω @ 5A, 4V

Power - Max :

5W

Operating Mode :

ENHANCEMENT MODE

Case Connection :

Isolated

Packaging :

Bulk

Product Status :

Active

Power Dissipation :

5(W)

Operating Temperature Classification :

Automotive

Input Capacitance :

460 pF

Max Power Dissipation :

5W

Current - Continuous Drain (Id) @ 25°C :

10A 6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Factory Lead Time :

12 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR