SLA5061

Manufacturer :

Sanken Electric Co., Ltd.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain-Source On-Volt :

60(V)

Qualification Status :

Not Qualified

Polarity :

N/P

RoHS Status :

RoHS Compliant

Package Type :

SIP

Mount :

Through Hole

Rad Hardened :

No

Number of Elements :

6

Operating Temperature :

150°C TJ

Rds On Max :

140 mΩ

Current - Continuous Drain (Id) @ 25°C :

10A 6A

Case Connection :

Isolated

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 10V

Package / Case :

12-SIP

Transistor Application :

SWITCHING

Packaging :

Bulk

Power Dissipation :

5(W)

Gate Charge (Qg) (Max) @ Vgs :

--

Gate-Source Voltage (Max) :

±20(V)

FET Type :

3 N and 3 P-Channel (3-Phase Bridge)

Input Capacitance :

460 pF

Pbfree Code :

yes

JESD-30 Code :

R-PSFM-T12

Drain Current-Max (Abs) (ID) :

10A

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

6A

Published :

2001

FET Feature :

Logic Level Gate

Lead Free :

Lead Free

Operating Temperature Classification :

Automotive

Channel Mode :

Enhancement

Factory Lead Time :

12 Weeks

Rds On (Max) @ Id, Vgs :

140m Ω @ 5A, 4V

Number of Terminations :

12

ECCN Code :

EAR99

Supplier Device Package :

12-SIP w/fin

Drain-source On Resistance-Max :

0.14Ohm

Drain to Source Voltage (Vdss) :

60V

Reach Compliance Code :

Unknown

HTS Code :

8541.29.00.95

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power - Max :

5W

DS Breakdown Voltage-Min :

60V

Series :

--

Operating Temp Range :

-40C to 150C

Product Status :

Active

Mounting :

Through Hole

Technology :

MOSFET (Metal Oxide)

Pulsed Drain Current-Max (IDM) :

15A

RoHS :

Compliant

Vgs(th) (Max) @ Id :

--

Package :

Bulk

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Type :

Power MOSFET

Terminal Position :

Single

Base Product Number :

SLA50

Max Power Dissipation :

5W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

12

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

COMPLEX

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL