SLA5037

Manufacturer :

Sanken Electric Co., Ltd.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Avalanche Energy Rating (Eas) :

200 mJ

Power - Max :

5W

Qualification Status :

Not Qualified

Channel Mode :

Enhancement

FET Feature :

Logic Level Gate

Packaging :

Tube

Drain to Source Voltage (Vdss) :

100V

Package Type :

SIP

Input Capacitance (Ciss) (Max) @ Vds :

1630pF @ 10V

Current - Continuous Drain (Id) @ 25°C :

10A

Terminal Position :

Single

Series :

--

Mounting :

Through Hole

Package :

Tube

Rds On (Max) @ Id, Vgs :

80m Ω @ 5A, 10V

Max Power Dissipation :

5W

Mounting Type :

Through Hole

Polarity :

N

Operating Temperature :

150°C TJ

Pulsed Drain Current-Max (IDM) :

40A

HTS Code :

8541.29.00.95

Power Dissipation :

5(W)

Rad Hardened :

No

Type :

Power MOSFET

Number of Elements :

4

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

10A

RoHS Status :

RoHS Compliant

Number of Terminations :

12

FET Type :

4 N-Channel

Gate-Source Voltage (Max) :

±20(V)

Operating Temp Range :

-40C to 150C

Drain-source On Resistance-Max :

0.08Ohm

Vgs(th) (Max) @ Id :

2V @ 250mA

Configuration :

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

Product Status :

Active

Pin Count :

12

Operating Temperature Classification :

Automotive

Factory Lead Time :

12 Weeks

Mount :

Through Hole

ECCN Code :

EAR99

Published :

2001

DS Breakdown Voltage-Min :

100V

Package / Case :

12-SIP

Drain-Source On-Volt :

100(V)

Continuous Drain Current :

10(A)

Other Names :

SLA5037 DK

JESD-30 Code :

R-PSFM-T12

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

--

Technology :

MOSFET (Metal Oxide)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Product Number :

SLA50

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

12-SIP w/fin

Peak Reflow Temperature (Cel) :

NOT SPECIFIED