SLA5037

Manufacturer :

Sanken Electric Co., Ltd.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

2V @ 250mA

Gate-Source Voltage (Max) :

±20(V)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

12

Drain-source On Resistance-Max :

0.08Ohm

Technology :

MOSFET (Metal Oxide)

Pulsed Drain Current-Max (IDM) :

40A

FET Feature :

Logic Level Gate

ECCN Code :

EAR99

Power - Max :

5W

Operating Temp Range :

-40C to 150C

HTS Code :

8541.29.00.95

Drain to Source Voltage (Vdss) :

100V

Power Dissipation :

5(W)

Package :

Tube

Other Names :

SLA5037 DK

DS Breakdown Voltage-Min :

100V

Number of Elements :

4

Base Product Number :

SLA50

FET Type :

4 N-Channel

Rad Hardened :

No

Qualification Status :

Not Qualified

Series :

--

Mount :

Through Hole

RoHS Status :

RoHS Compliant

Package Type :

SIP

Operating Temperature :

150°C TJ

Pin Count :

12

Operating Temperature Classification :

Automotive

JESD-30 Code :

R-PSFM-T12

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1630pF @ 10V

Configuration :

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

Published :

2001

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Supplier Device Package :

12-SIP w/fin

Drain-Source On-Volt :

100(V)

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

200 mJ

Packaging :

Tube

Type :

Power MOSFET

Package / Case :

12-SIP

Gate Charge (Qg) (Max) @ Vgs :

--

Continuous Drain Current (ID) :

10A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

10A

Polarity :

N

Transistor Element Material :

SILICON

Pbfree Code :

yes

Factory Lead Time :

12 Weeks

Mounting :

Through Hole

Rds On (Max) @ Id, Vgs :

80m Ω @ 5A, 10V

Product Status :

Active

Channel Mode :

Enhancement

Max Power Dissipation :

5W

Continuous Drain Current :

10(A)

FET Technology :

METAL-OXIDE SEMICONDUCTOR