SLA5041

Manufacturer :

Sanken Electric Co., Ltd.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

5(W)

Package / Case :

12-SIP

Continuous Drain Current :

10(A)

Rds On (Max) @ Id, Vgs :

175m Ω @ 5A, 10V

Power - Max :

5W

Transistor Element Material :

SILICON

Published :

2001

Current - Continuous Drain (Id) @ 25°C :

10A

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

4V @ 1mA

DS Breakdown Voltage-Min :

200V

Drain to Source Voltage (Vdss) :

200V

Max Power Dissipation :

5W

Pbfree Code :

yes

Product Status :

Active

FET Type :

4 N-Channel

Technology :

MOSFET (Metal Oxide)

Number of Terminations :

12

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

--

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rad Hardened :

No

Series :

--

Gate-Source Voltage (Max) :

±20(V)

Number of Elements :

4

Drain-source On Resistance-Max :

0.175Ohm

HTS Code :

8541.29.00.95

Operating Temp Range :

-40C to 150C

Operating Temperature :

150°C TJ

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Type :

Power MOSFET

Mounting Type :

Through Hole

Supplier Device Package :

12-SIP w/fin

Packaging :

Tube

Operating Temperature Classification :

AUTOMOTIVEC

Polarity :

N

Terminal Position :

Single

Pin Count :

12

JESD-30 Code :

R-PSFM-T12

Base Product Number :

SLA50

Avalanche Energy Rating (Eas) :

120 mJ

Qualification Status :

Not Qualified

Factory Lead Time :

12 Weeks

Drain-Source On-Volt :

200(V)

Configuration :

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

10A

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 10V

Pulsed Drain Current-Max (IDM) :

40A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Channel Mode :

Enhancement

Package Type :

SIP

Mounting :

Through Hole

Package :

Tube