SLA5041

Manufacturer :

Sanken Electric Co., Ltd.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

5(W)

Pbfree Code :

yes

Drain-Source On-Volt :

200(V)

Packaging :

Tube

Package :

Tube

Product Status :

Active

Operating Temp Range :

-40C to 150C

DS Breakdown Voltage-Min :

200V

Channel Mode :

Enhancement

Gate-Source Voltage (Max) :

±20(V)

Reach Compliance Code :

Unknown

FET Feature :

Logic Level Gate

Pulsed Drain Current-Max (IDM) :

40A

Factory Lead Time :

12 Weeks

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

200V

Current - Continuous Drain (Id) @ 25°C :

10A

Continuous Drain Current :

10(A)

Mount :

Through Hole

HTS Code :

8541.29.00.95

FET Type :

4 N-Channel

Technology :

MOSFET (Metal Oxide)

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.175Ohm

Published :

2001

Package / Case :

12-SIP

RoHS Status :

RoHS Compliant

Mounting :

Through Hole

Base Product Number :

SLA50

Polarity :

N

Operating Temperature Classification :

AUTOMOTIVEC

Pin Count :

12

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Elements :

4

JESD-30 Code :

R-PSFM-T12

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

10A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

175m Ω @ 5A, 10V

Type :

Power MOSFET

Power - Max :

5W

Supplier Device Package :

12-SIP w/fin

Transistor Element Material :

SILICON

Package Type :

SIP

Avalanche Energy Rating (Eas) :

120 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

12

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

--

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rad Hardened :

No

ECCN Code :

EAR99

Max Power Dissipation :

5W

Series :

--

Configuration :

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE