SIZ322DT-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Height :

800μm

Number of Channels :

2

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

16.7W Tc

Rds On (Max) @ Id, Vgs :

6.35m Ω @ 15A, 10V

Reach Compliance Code :

Unknown

Published :

2018

Turn-Off Delay Time :

15 ns

Mounting Type :

Surface Mount

Package / Case :

8-PowerWDFN

Gate Charge (Qg) (Max) @ Vgs :

20.1nC @ 10V

Continuous Drain Current (ID) :

19A

Operating Temperature :

-55°C~150°C TJ

FET Type :

2 N-Channel (Dual)

Max Junction Temperature (Tj) :

150°C

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Feature :

Standard

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 12.5V

Drain to Source Breakdown Voltage :

25V

Turn On Delay Time :

10 ns

Power Dissipation :

3.7W

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Packaging :

Tape and Reel (TR)

Factory Lead Time :

14 Weeks

Series :

TrenchFET® Gen IV

RoHS Status :

ROHS3 Compliant