SIZ300DT-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Fall Time (Typ) :

40 ns

Series :

TrenchFET®

Length :

3mm

Packaging :

Tape and Reel (TR)

Base Part Number :

SIZ300

Radiation Hardening :

No

Number of Terminations :

8

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Number of Channels :

2

JESD-609 Code :

e3

Max Power Dissipation :

31W

Drain to Source Breakdown Voltage :

30V

Package / Case :

8-PowerWDFN

Lead Free :

Lead Free

FET Type :

2 N-Channel (Half Bridge)

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

11A

Published :

2015

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

7 mJ

Element Configuration :

Dual

Rise Time :

80ns

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 15V

Power - Max :

16.7W 31W

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

24m Ω @ 9.8A, 10V

Continuous Drain Current (ID) :

28A

Transistor Application :

SWITCHING

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

Case Connection :

DRAIN SOURCE

Mounting Type :

Surface Mount

Pin Count :

8

Pulsed Drain Current-Max (IDM) :

30A

Width :

3mm

Pbfree Code :

yes

Height :

750μm

Number of Pins :

8

FET Feature :

Logic Level Gate

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

14 Weeks

Current - Continuous Drain (Id) @ 25°C :

11A 28A

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260