SIZ320DT-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

8.9nC @ 4.5V, 11.9nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 12.5V 1370pF @ 12.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Factory Lead Time :

14 Weeks

Rds On (Max) @ Id, Vgs :

8.3m Ω @ 8A, 10V, 4.24m Ω @ 10A, 10V

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

30A Tc 40A Tc

FET Feature :

Standard

Series :

PowerPAIR®, TrenchFET®

RoHS Status :

ROHS3 Compliant

Number of Channels :

2

ECCN Code :

EAR99

FET Type :

2 N-Channel (Dual)

Height :

800μm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power - Max :

16.7W 31W

Max Junction Temperature (Tj) :

150°C

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2017

Drain to Source Breakdown Voltage :

25V

Mounting Type :

Surface Mount

Package / Case :

8-PowerWDFN