SIB914DK-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

125pF @ 4V

Threshold Voltage :

800mV

Length :

1.6mm

Mounting Type :

Surface Mount

Number of Channels :

2

Gate to Source Voltage (Vgs) :

5V

Package / Case :

PowerPAK® SC-75-6L Dual

Rds On (Max) @ Id, Vgs :

113m Ω @ 2.5A, 4.5V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Pin Count :

6

Continuous Drain Current (ID) :

1.5A

Gate Charge (Qg) (Max) @ Vgs :

2.6nC @ 5V

Power Dissipation :

1.1W

FET Feature :

Standard

Width :

1.6mm

Number of Pins :

6

Height :

750μm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

22 ns

REACH SVHC :

Unknown

Fall Time (Typ) :

7 ns

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

3.1W

Contact Plating :

Tin

Terminal Form :

C BEND

Time@Peak Reflow Temperature-Max (s) :

40

Series :

TrenchFET®

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

800mV @ 250μA

Mount :

Surface Mount

Pbfree Code :

yes

Nominal Vgs :

800 mV

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

8V

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Part Number :

SIB914

Resistance :

113mOhm

Drain to Source Breakdown Voltage :

8V

Weight :

95.991485mg

Number of Terminations :

6

FET Type :

2 N-Channel (Dual)

Rise Time :

7ns

Turn On Delay Time :

4 ns

Published :

2012