SIB900EDK-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Vgs(th) (Max) @ Id :

1V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

1.7nC @ 4.5V

Pin Count :

6

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

3.1W

Fall Time (Typ) :

12 ns

Radiation Hardening :

No

Number of Pins :

6

Continuous Drain Current (ID) :

1.5A

Rds On (Max) @ Id, Vgs :

225m Ω @ 1.6A, 4.5V

Pbfree Code :

yes

Published :

2016

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Rise Time :

12ns

Base Part Number :

SIB900

Series :

TrenchFET®

Case Connection :

DRAIN

FET Feature :

Logic Level Gate

DS Breakdown Voltage-Min :

20V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Additional Feature :

ESD Protection

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

FET Type :

2 N-Channel (Dual)

Gate to Source Voltage (Vgs) :

6V

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

20V

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.225Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

70 ns

ECCN Code :

EAR99

Turn On Delay Time :

20 ns

Package / Case :

PowerPAK® SC-75-6L Dual