SIB912DK-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Element Configuration :

Dual

Max Power Dissipation :

3.1W

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 8V

Rds On (Max) @ Id, Vgs :

216m Ω @ 1.8A, 4.5V

Base Part Number :

SIB912

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

95.991485mg

Packaging :

Tape and Reel (TR)

Threshold Voltage :

400mV

Fall Time (Typ) :

10 ns

Package / Case :

PowerPAK® SC-75-6L Dual

REACH SVHC :

Unknown

Mount :

Surface Mount

Case Connection :

DRAIN

Turn-Off Delay Time :

24 ns

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

Pin Count :

6

Height :

750μm

Continuous Drain Current (ID) :

1.5A

Drain to Source Breakdown Voltage :

20V

Pbfree Code :

yes

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

95pF @ 10V

Number of Pins :

6

Radiation Hardening :

No

Rise Time :

10ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Series :

TrenchFET®

Transistor Application :

SWITCHING

Length :

1.6mm

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

40

Gate to Source Voltage (Vgs) :

8V

Transistor Element Material :

SILICON

Width :

1.6mm

Drain to Source Voltage (Vdss) :

20V

Number of Terminations :

6

Published :

2013

Number of Channels :

2

Turn On Delay Time :

5 ns

Power Dissipation :

1.1W

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

14 Weeks

Peak Reflow Temperature (Cel) :

260