SI6975DQ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

830mW

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Drain to Source Voltage (Vdss) :

12V

Gate to Source Voltage (Vgs) :

8V

Drain to Source Breakdown Voltage :

12V

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 4.5V

Rds On (Max) @ Id, Vgs :

27mOhm @ 5.1A, 4.5V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

8-TSSOP

Continuous Drain Current (ID) :

4.3A

Drain to Source Resistance :

27mOhm

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

FET Type :

2 P-Channel (Dual)

Published :

2016

Vgs(th) (Max) @ Id :

450mV @ 5mA (Min)

Rds On Max :

27 mΩ

Mount :

Surface Mount

Series :

TrenchFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

27mOhm

Max Power Dissipation :

830mW

Min Operating Temperature :

-55°C

Number of Pins :

8

Mounting Type :

Surface Mount

Factory Lead Time :

21 Weeks

Power - Max :

830mW

Max Operating Temperature :

150°C

FET Feature :

Logic Level Gate

Current - Continuous Drain (Id) @ 25°C :

4.3A