SI6926ADQ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Time@Peak Reflow Temperature-Max (s) :

40

Fall Time (Typ) :

16 ns

Radiation Hardening :

No

Weight :

157.991892mg

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2012

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

8V

Number of Terminations :

8

Length :

3mm

Factory Lead Time :

14 Weeks

Turn-Off Delay Time :

46 ns

Drain Current-Max (Abs) (ID) :

4.1A

Terminal Form :

Gull wing

Rise Time :

16ns

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Continuous Drain Current (ID) :

4.5A

Width :

4.4mm

Mounting Type :

Surface Mount

Number of Elements :

2

Turn On Delay Time :

6 ns

Element Configuration :

Dual

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 4.5V

Resistance :

30mOhm

Drain to Source Voltage (Vdss) :

20V

FET Type :

2 N-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Threshold Voltage :

1V

Vgs(th) (Max) @ Id :

1V @ 250μA

Packaging :

Tape and Reel (TR)

REACH SVHC :

Unknown

Max Power Dissipation :

830mW

Contact Plating :

Tin

Number of Pins :

8

Base Part Number :

SI6926

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

4.1A

Rds On (Max) @ Id, Vgs :

30m Ω @ 4.5A, 4.5V

Height :

1mm

Lead Free :

Lead Free

Power Dissipation :

830mW

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate