SI6933DQ-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

30V

Terminal Finish :

MATTE TIN

Packaging :

Tape and Reel (TR)

Length :

3mm

Fall Time (Typ) :

10 ns

Resistance :

45mOhm

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Rise Time :

10ns

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

45m Ω @ 3.5A, 10V

Number of Terminations :

8

Mount :

Surface Mount

FET Type :

2 P-Channel (Dual)

Max Power Dissipation :

1W

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

13 ns

Turn-Off Delay Time :

33 ns

Number of Elements :

2

Power Dissipation :

1W

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Published :

2008

Drain to Source Breakdown Voltage :

-30V

ECCN Code :

EAR99

Series :

TrenchFET®

Number of Pins :

8

Drain Current-Max (Abs) (ID) :

3.5A

Lead Free :

Lead Free

Continuous Drain Current (ID) :

-2.3A

Transistor Element Material :

SILICON

Weight :

157.991892mg

Pin Count :

8

Height :

1mm

Element Configuration :

Dual

Width :

4.4mm

Gate to Source Voltage (Vgs) :

20V

FET Feature :

Logic Level Gate