SI6969BDQ-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Operating Temperature :

150°C

FET Feature :

Logic Level Gate

RoHS Status :

ROHS3 Compliant

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Number of Pins :

8

Weight :

157.991892mg

Length :

3mm

Number of Channels :

2

Vgs(th) (Max) @ Id :

800mV @ 250μA

Rds On (Max) @ Id, Vgs :

30mOhm @ 4.6A, 4.5V

Rise Time :

35ns

Supplier Device Package :

8-TSSOP

Gate to Source Voltage (Vgs) :

8V

Current - Continuous Drain (Id) @ 25°C :

4A

FET Type :

2 P-Channel (Dual)

Published :

2016

Drain to Source Breakdown Voltage :

-12V

Width :

4.4mm

Height :

1mm

Series :

TrenchFET®

Base Part Number :

SI6969

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

830mW

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Power - Max :

830mW

Mount :

Surface Mount

Turn-Off Delay Time :

110 ns

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 4.5V

Drain to Source Resistance :

30mOhm

Element Configuration :

Dual

Rds On Max :

30 mΩ

Turn On Delay Time :

20 ns

Fall Time (Typ) :

35 ns

Drain to Source Voltage (Vdss) :

12V

Continuous Drain Current (ID) :

4A