SI4622DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Drain Current-Max (Abs) (ID) :

8A

Width :

4mm

FET Type :

2 N-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

16m Ω @ 9.6A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Terminations :

8

Series :

SkyFET®, TrenchFET®

Rise Time :

12ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Number of Channels :

2

Vgs(th) (Max) @ Id :

2.5V @ 1mA

FET Feature :

Standard

Turn On Delay Time :

14 ns

Drain to Source Voltage (Vdss) :

30V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

8A

Gate to Source Voltage (Vgs) :

20V

Published :

2013

Power Dissipation :

2.2W

Max Power Dissipation :

3.1W

Base Part Number :

SI4622

Turn-Off Delay Time :

21 ns

Fall Time (Typ) :

11 ns

Packaging :

Tape and Reel (TR)

Power - Max :

3.3W 3.1W

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Height :

1.55mm

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

2458pF @ 15V

Weight :

186.993455mg

Mount :

Surface Mount

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Number of Pins :

8

Length :

5mm