SI4626ADY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

21ns

FET Type :

N-Channel

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Vgs (Max) :

±20V

Height :

1.55mm

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Transistor Application :

SWITCHING

Turn-Off Delay Time :

45 ns

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

3W Ta 6W Tc

Mounting Type :

Surface Mount

Terminal Position :

Dual

Mount :

Surface Mount

Fall Time (Typ) :

18 ns

Element Configuration :

Single

JESD-609 Code :

e3

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

2016

Drain-source On Resistance-Max :

0.0033Ohm

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

3W

Turn On Delay Time :

44 ns

Number of Terminations :

8

Series :

TrenchFET®

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Factory Lead Time :

14 Weeks

Contact Plating :

Tin

Number of Pins :

8

Weight :

186.993455mg

Input Capacitance (Ciss) (Max) @ Vds :

5370pF @ 15V

Continuous Drain Current (ID) :

30A

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Length :

5mm

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Width :

4mm

ECCN Code :

EAR99

Radiation Hardening :

No

DS Breakdown Voltage-Min :

30V

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 15A, 10V