SI4618DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Standard

Threshold Voltage :

1V

Mount :

Surface Mount

Rds On Max :

17 mΩ

Drain to Source Breakdown Voltage :

30V

Max Operating Temperature :

150°C

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

1535pF @ 15V

Weight :

506.605978mg

Drain to Source Resistance :

10MOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

1.535nF

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Supplier Device Package :

8-SO

Min Operating Temperature :

-55°C

RoHS Status :

ROHS3 Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

17mOhm @ 8A, 10V

Published :

2012

Factory Lead Time :

15 Weeks

FET Type :

2 N-Channel (Half Bridge)

Number of Pins :

8

Continuous Drain Current (ID) :

11.4A

Number of Channels :

2

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Gate to Source Voltage (Vgs) :

16V

Number of Elements :

2

Series :

TrenchFET®

Mounting Type :

Surface Mount

Max Power Dissipation :

2.35W

Current - Continuous Drain (Id) @ 25°C :

8A 15.2A

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Power - Max :

1.98W 4.16W

Element Configuration :

Dual