SI4569DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

855pF @ 20V

Rds On (Max) @ Id, Vgs :

27m Ω @ 6A, 10V

Pin Count :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-609 Code :

e3

Rise Time :

105ns

Max Power Dissipation :

2W

FET Feature :

Standard

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Drain to Source Breakdown Voltage :

40V

Power - Max :

3.1W 3.2W

Continuous Drain Current (ID) :

6A

Vgs(th) (Max) @ Id :

2V @ 250μA

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Resistance :

27mOhm

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Width :

4mm

Packaging :

Tape and Reel (TR)

Published :

2016

Current - Continuous Drain (Id) @ 25°C :

7.6A 7.9A

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

60 ns

Power Dissipation :

2W

Number of Pins :

8

FET Type :

N and P-Channel

Terminal Form :

Gull wing

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

6A

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

16V

Transistor Element Material :

SILICON

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Height :

1.5mm

Transistor Application :

SWITCHING

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

5 mJ

Element Configuration :

Dual

Length :

5mm

Turn-Off Delay Time :

60 ns

Base Part Number :

SI4569