SI4511DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

40

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Drain to Source Voltage (Vdss) :

20V

Mount :

Surface Mount

Turn-Off Delay Time :

70 ns

Threshold Voltage :

1.8V

Height :

1.55mm

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Packaging :

Cut Tape (CT)

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Weight :

186.993455mg

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

8

Number of Channels :

2

Drain Current-Max (Abs) (ID) :

4.6A

Pbfree Code :

yes

Length :

5mm

JESD-609 Code :

e3

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Part Number :

SI4511

Width :

4mm

Continuous Drain Current (ID) :

9.6A

Pin Count :

8

Rds On (Max) @ Id, Vgs :

14.5m Ω @ 9.6A, 10V

FET Feature :

Logic Level Gate

Max Operating Temperature :

150°C

Rise Time :

30ns

Published :

2016

Turn On Delay Time :

25 ns

FET Type :

N and P-Channel

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

7.2A 4.6A

REACH SVHC :

Unknown

Number of Pins :

8

Series :

TrenchFET®

Drain-source On Resistance-Max :

0.0145Ohm

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

12V

Terminal Form :

Gull wing

Max Power Dissipation :

1.1W

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Fall Time (Typ) :

30 ns

Nominal Vgs :

1.8 V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Power Dissipation :

1.1W

Min Operating Temperature :

-55°C