SI4532CDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

REACH SVHC :

Unknown

Rise Time :

13ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Factory Lead Time :

14 Weeks

Terminal Position :

Dual

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Mount :

Surface Mount

Published :

2013

Number of Channels :

2

Pbfree Code :

yes

Width :

4mm

Resistance :

89mOhm

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Threshold Voltage :

1V

Radiation Hardening :

No

Height :

1.75mm

Pin Count :

8

Continuous Drain Current (ID) :

6A

Number of Pins :

8

Length :

5mm

Rds On (Max) @ Id, Vgs :

47m Ω @ 3.5A, 10V

Drain Current-Max (Abs) (ID) :

6A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Max Power Dissipation :

2.78W

Max Junction Temperature (Tj) :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

305pF @ 15V

Power Dissipation :

2.78W

Current - Continuous Drain (Id) @ 25°C :

6A 4.3A

Nominal Vgs :

1 V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Drain to Source Breakdown Voltage :

30V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn-Off Delay Time :

17 ns

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

Terminal Finish :

PURE MATTE TIN

Weight :

186.993455mg

Terminal Form :

Gull wing

Base Part Number :

SI4532

Number of Elements :

2

Turn On Delay Time :

5.5 ns

Fall Time (Typ) :

7.7 ns

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

FET Feature :

Standard