SI4565ADY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Operating Temperature :

150°C

Base Part Number :

SI4565

FET Type :

N and P-Channel

Power Dissipation :

2W

Current - Continuous Drain (Id) @ 25°C :

6.6A 5.6A

Turn On Delay Time :

21 ns

Fall Time (Typ) :

56 ns

Gate to Source Voltage (Vgs) :

16V

Rds On (Max) @ Id, Vgs :

39mOhm @ 5A, 10V

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Published :

2011

Rise Time :

90ns

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

FET Feature :

Standard

Min Operating Temperature :

-55°C

Series :

TrenchFET®

Drain to Source Resistance :

54mOhm

Input Capacitance (Ciss) (Max) @ Vds :

625pF @ 20V

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

40V

Turn-Off Delay Time :

44 ns

Operating Temperature :

-55°C~150°C TJ

Power - Max :

3.1W

Element Configuration :

Dual

Max Power Dissipation :

2W

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Mount :

Surface Mount

Resistance :

39mOhm

Input Capacitance :

625pF

Number of Pins :

8

Supplier Device Package :

8-SO

Drain to Source Breakdown Voltage :

40V

Rds On Max :

39 mΩ

Packaging :

Tape and Reel (TR)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current (ID) :

4.5A