SI4564DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Finish :

Matte Tin (Sn)

REACH SVHC :

Unknown

Turn On Delay Time :

42 ns

Resistance :

21mOhm

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Dual

Lead Free :

Lead Free

DS Breakdown Voltage-Min :

40V

Max Junction Temperature (Tj) :

150°C

Height :

1.75mm

Pbfree Code :

yes

Factory Lead Time :

14 Weeks

Power - Max :

3.1W 3.2W

Nominal Vgs :

800 mV

Peak Reflow Temperature (Cel) :

260

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

3.2W

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

855pF @ 20V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

10A 9.2A

Continuous Drain Current (ID) :

10A

Transistor Element Material :

SILICON

Series :

TrenchFET®

FET Feature :

Logic Level Gate

Number of Terminations :

8

Mounting Type :

Surface Mount

Rise Time :

40ns

Fall Time (Typ) :

15 ns

JESD-609 Code :

e3

Mount :

Surface Mount

ECCN Code :

EAR99

Number of Pins :

8

Terminal Form :

Gull wing

Power Dissipation :

2W

Drain Current-Max (Abs) (ID) :

8A

Number of Channels :

2

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

17.5m Ω @ 8A, 10V

Turn-Off Delay Time :

40 ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

2

Drain to Source Voltage (Vdss) :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Weight :

506.605978mg

Base Part Number :

SI4564

FET Type :

N and P-Channel

Published :

2010

Threshold Voltage :

800mV

Radiation Hardening :

No

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

40