SD1013-03

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Pins :

4

Collector-Base Capacitance-Max :

15pF

Terminal Position :

Radial

Mounting Type :

Chassis Mount

Polarity/Channel Type :

NPN

Power - Max :

13W

Gain :

10dB

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Frequency - Transition :

150MHz

Max Power Dissipation :

13W

Number of Elements :

1

Package / Case :

M113

Published :

2001

ECCN Code :

EAR99

Number of Terminations :

4

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Additional Feature :

High Reliability

Radiation Hardening :

No

Pbfree Code :

No

Terminal Form :

Flat

Collector Base Voltage (VCBO) :

65V

Transistor Element Material :

SILICON

Transistor Type :

NPN

Collector Emitter Breakdown Voltage :

35V

Highest Frequency Band :

VERY HIGH FREQUENCY B

Terminal Finish :

TIN LEAD

Packaging :

Bulk

Transition Frequency :

150MHz

Operating Temperature :

200°C TJ

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 200mA 5V

Collector Emitter Voltage (VCEO) :

35V

Max Collector Current :

1A

JESD-609 Code :

e0

Mount :

Chassis Mount, Screw